Threshold Voltage Instability in SiC Power MOSFETs

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Consentino, Giuseppe; Guevara, Esteban; Crupi, Felice (Università della Calabria, Italy)
Sanchez, Luis (Università della Calabria, Italy & USFQ, Ecuador)
Reggiani, Susanna (Università di Bologna, Italy)
Meneghesso, Gaudenzio (Università di Padova, Italy)

Charge trapping and de-trapping phenomena in SiC power MOSFETs were investigated by performing two different types of electrical characterization: hysteresis and positive bias temperature instability (PBTI) measurements. A positive stress voltage to the gate results in positive threshold voltage shift (DeltaVT), which can be fully recovered by applying a small negative voltage. This fully recoverable DeltaVT behavior is ascribed to the trapping and de-trapping of electrons from the SiC layer into the pre-existing interface or oxide traps and vice versa. The apparent anomalous decrease of the trapped charge with temperature is ascribed to the faster de-trapping which occurs at higher temperature during the measurement delay between the stress and the sense phase. The trapping rate exhibits a universal decreasing behavior as a function of the trapped charges, independently of stress voltage and stress temperature.