Challenging the 2D-Short Circuit Detection Method for SiC MOSFETs

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 8Sprache: EnglischTyp: PDF

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Hofstetter, Patrick; Bakran, Mark-M. (University of Bayreuth, Center of Energy Technology (ZET), Germany)

After proving the potential of the 2D-short circuit detection method for SiC MOSFETs in the preceding work [1], this paper aims to test worst case application conditions and to further develop the protection system. Besides investigations on temperature influences and low inductive setups, it is shown how to cope with oscillations on the drain current with different circuit extensions. These may even occur during conductive state, due to the switching of adjacent phases.