Characterization of the parasitic turn-on behavior of discrete CoolSiC™ MOSFETs
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Sobe, Klaus; Klobucar, Blaz (Infineon Technologies Austria AG, Austria)
Basler, Thomas (Infineon Technologies AG, Germany)
Inhalt:
This paper presents an experimental study on the ruggedness of CoolSiC(TM) MOSFETs against parasitic turn-on caused by the Miller capacitance. After an explanation of the basic phenomenon, two characterization measurements are performed in order to determine the blocking voltage and gate resistance values required to trigger a parasitic turn-on. Based on the results, the feasibility of operating the switches without a negative turn-off gate voltage is discussed. All measurements are performed using discrete components in TO-247 3-pin and 4-pin packages. A publicly available evaluation board serves as test platform.