Bidirectional Switch Based on Silicon High Voltage Superjunction MOSFETs and TVS Diode Used in Low Voltage DC SSCB
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 8Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Askan, Kenan; Bartonek, Michael (Eaton Industries GmbH, Austria)
Stueckler, Franz (Infineon Technologies AG, Austria)
This paper reports on a bidirectional switch based on 600 V, 10 mOmega silicon superjunction MOSFETs and a transient-voltage-suppression (TVS) diode to be used in a solid-state circuit breaker (SSCB) application. The SSCB has a rating of 45 A, 380 VDC / 230 VAC and is designed to have an on-state power dissipation per pole comparable to a standard electromechanical breaker. Due to the achieved very low power loss, no active cooling is required. In addition, the SSCB provides a wide range of overcurrent tripping curve options. An experimental setup is developed to characterize switching operations under fault, nominal, and repetitive highly inductive nominal currents. Additionally, time-current tripping characteristics of the switch are investigated by means of thermal simulations.