Short Circuit Detection Methods for Silicon Carbide (SiC) Power Semiconductors

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 7Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Person, Jonas; Andresen, Markus; Liserre, Marco (Christian-Albrechts-Universität zu Kiel, Chair of Power Electronics, Germany)
Rettmann, Tim; Muehlfeld, Ole (Danfoss Silicon Power GmbH, Germany)

The use of Silicon Carbide (SiC) power semiconductors presents an attractive solution for increasing the efficiency and the power density of power converters. However, the capability to withstand a short circuit represents a challenge, because of higher current density and smaller chip size compared to Si-based power semiconductors with similar rating. Therefore, the time to detect and interrupt a short circuit is shorter and requires a fast detection and switch off of a short circuit current. In this work, short circuits detection methods for SiC MOSFETs are compared and a desaturation detection is developed and validated experimentally on a specially built SiC MOSFET module.