Evaluation of 800V Traction Inverter with SiC-MOSFET versus Si-IGBT Power Semiconductor Technology

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Hain, Stefan; Meiler, Michael; Denk, Marco (ZF Friedrichshafen AG, Germany)

Inhalt:
Electric cars with 800V inverter technology can be recharged within a short time due to a possible charging power up to 350kW. Thus, charging with 800 V directly addresses the acceptance of future electric mobility. In 800 V-systems, Si-IGBTs have to compete with new SiC-MOSFETs. Only the technology that leads to cost savings at system level will be able to win the race. Therefore, a certain range of an electric car can be achieved by additional battery capacity or improved efficiency. As a central evaluation criterion, this work examines the efficiency of a 800 V Si and a 800 V SiC traction inverter with identical maximum output power.