Evaluation of 800V Traction Inverter with SiC-MOSFET versus Si-IGBT Power Semiconductor Technology
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Hain, Stefan; Meiler, Michael; Denk, Marco (ZF Friedrichshafen AG, Germany)
Electric cars with 800V inverter technology can be recharged within a short time due to a possible charging power up to 350kW. Thus, charging with 800 V directly addresses the acceptance of future electric mobility. In 800 V-systems, Si-IGBTs have to compete with new SiC-MOSFETs. Only the technology that leads to cost savings at system level will be able to win the race. Therefore, a certain range of an electric car can be achieved by additional battery capacity or improved efficiency. As a central evaluation criterion, this work examines the efficiency of a 800 V Si and a 800 V SiC traction inverter with identical maximum output power.