A 3.3 kV 1000 A High Power Density SiC Power Module with Sintered Copper Die Attach Technology
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Yasui, Kan; Hayakawa, Seiichi; Ishigaki, Takashi; Morita, Toshiaki; Tabata, Toshihito; Takayanagi, Yuji; Inoue, Yuta; Murata, Tatsunori; Tadano, Akiyoshi; Kinoshita, Koyo; Hoshi, Masahiko; Koseki, Katsuya; Shono, Kohei; Hamada, Kanya; Imaizumi, Takashi; Saito, Katsuaki (Hitachi Power Semiconductor Device Ltd., Japan)
Matsushima, Hiroyuki; Miki, Hiroshi; Masuda, Toru; Kobayashi, Toshiyuki; Ando, Takashi; Konno, Akitoyo (Research & Development Group, Hitachi Ltd., Japan)
To achieve higher power density and higher temperature operation, a 3.3 kV/1000 A full-SiC power module with novel sintered copper die attach technology for Tj,max=175deg C operation was developed. The power density reached 47 kVA/cm2, which is equivalent to 25 % increase compared to previous work as the world’s highest (published) power density high voltage power module. The module consisted of SiC-MOSFETs without SiC-SBDs. The diode-less feature and sintered copper die attach technology enabled such a higher power density. Thermal resistance measurement in the form of structure functions showed that thermal resistance of the sintered copper layer was reduced to one third of the solder layer. To demonstrate reliability for 1000 A and 175deg C operation, a power cycling test, high temperature reverse bias test and high temperature high humidity reverse bias test were conducted. Static electrical characteristics, as well as switching waveforms and SOA were validated by testing.