Low inductive SiC Mold Module with direct cooling

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 6Sprache: EnglischTyp: PDF

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Marczok, Christoph; Hoene, Eckart; Thomas, Tina (Fraunhofer IZM, Germany)
Meyer, Andreas; Schmidt, Karsten (Rogers Germany GmbH, Germany)

To make use of the superior properties of Wide Band Gap (WBG) semiconductors power modules need an optimum thermal performance, good parasitic electromagnetic properties, a high temperature capability and the possibility for a high degree of integration. This investigation demonstrates a new setup for power modules with SiC power MOSFETs using multilayer ceramic substrates with direct substrate water-cooling. The power modules are encapsulated by transfer molding with a metallized and structured copper layer on top. SMD components are soldered directly on this metallization. Finally, the paper shows the double pulse switching results of the power module.