Low inductive SiC Mold Module with direct cooling

Inhalt:
To make use of the superior properties of Wide Band Gap (WBG) semiconductors power modules need an optimum thermal performance, good parasitic electromagnetic properties, a high temperature capability and the possibility for a high degree of integration. This investigation demonstrates a new setup for power modules with SiC power MOSFETs using multilayer ceramic substrates with direct substrate water-cooling. The power modules are encapsulated by transfer molding with a metallized and structured copper layer on top. SMD components are soldered directly on this metallization. Finally, the paper shows the double pulse switching results of the power module.