Characterization of 1.7kV SiC MOSFET / Si IGBT cross-switch hybrid on the LinPak platform
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Kicin, Slavo; Skibin, Stanislav; Canales, Francisco; Loisy, Jean-Yves (ABB Corporate Research, Switzerland)
Vemulapati, Umamaheswara; Stampf, Gernot (ABB Semiconductors, Switzerland)
Rahimo, Munaf (MTAL, Switzerland)
Inhalt:
In this paper, the feasibility of a high-power cross-switch hybrid module and its benefits were demonstrated. First, numerical simulations were performed to determine the most cost-effective ratio of Si/SiC area in the module. Afterwards, concept demonstrators combining a Si IGBT and a diode together with a SiC MOSFETs were assembled on the ABB platform of MV Si half-bridge module - LinPak. Finally, static and dynamic performance of the cross-switch hybrid concept was investigated, and the concept was benchmarked against an all-Si and all-SiC solution.