Communication using the Isolated Power Supply of Gate Drivers for SiC Semiconductors Monitoring applications

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Weckbrodt, Julien (University of Nantes – IETR laboratory, France & Safran Tech, France)
Ginot, Nicolas; Batard, Christophe (University of Nantes – IETR laboratory, France)
Le, Thanh Long (Safran Tech, France)

Silicon Carbide power semiconductors devices such as SiC MOSFETs are more and more used in power converters. However, the maturity of the SiC technology is moderate in the field of power electronics. Many research works are in progress to determine the behavior of SiC MOSFETs during ageing. Some studies on reliability identified parameters which could be used as ageing indicators. The on-line monitoring of these parameters requires measurement circuits and data exchange through the galvanic isolation of the gate driver. In this paper, a new bidirectional data transmission method is proposed for gate drivers used for driving 1.2kV SiC MOSFETs. Data exchange in gate drivers should enable the dynamic parametrization of the device and the monitoring data feedback. The proposed method enables energy transmission and bidirectional communication on a single power supply transformer. Experimental results are provided demonstrating 1Mb/s for TxD and 16kb/s for RxD. The targeted application is the health monitoring of power SiC MOSFET using the gate drive system.