A 3-Phase T-type 3-Level Inverter using GaN Bidirectional Switch with Very Low On-State Resistance

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Ueno, Hiroaki; Kinoshita, Yusuke; Yamada, Yasuhiro; Suzuki, Asamira; Ichiryu, Takashi; Nomura, Masanori; Fujiwara, Hideaki; Ishida, Hidetoshi; Hatsuda, Tsuguyasu (Automotive & Industrial Systems Company, Panasonic Corporation, Japan)

A 3-phase T-type 3-level inverter using a GaN bidirectional switch with very low on-state resistance is presented for the first time. The GaN bidirectional switch is realized by only 1 transistor with dual-gate structure instead of a conventional bidirectional switch which consists of 2 IGBTs and 2 fast recovery diodes with on-state voltage offset. Moreover, the on-state resistance of the GaN bidirectional switch is reduced from 42mOmega to 26mOmega by utilizing reduction of parasitic resistance in a device package. The fabricated 3-phase T-type 3-level inverter using the GaN bidirectional switch exhibits higher peak conversion efficiency 98.7% and 21% reduction of the conversion loss at the output power of 4kW compared to that using the conventional Si-IGBT-based bidirectional switch.