Defining the Ruggedness of Power MOSFETs used in Repetitive Avalanche for Automotive Applications
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Berry, Andy (Nexperia, UK & University of Manchester, UK)
Lawson, Wayne (Nexperia, UK)
Inhalt:
This paper present results from repetitively avalanching different types of modern power MOSFETs. The capability of power MOSFETs is shown to be related to their structure and there is clear advantage in repetitive avalanche performance for Superjunction type technologies verses Shielded-Gate MOSFET technologies with Superjunction types showing much lower rate of degradation under repetitive avalanche stress. Also, there are similarities between degradation shown in Shielded-Gate types operating in repetitive avalanche when compared to constant-current stress avalanche.