A derivative pulsed-current sensor and its application for protection and monitoring of GaN HEMTs
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Ben-Yaakov, Shmuel (Sam) (Ben-Gurion University, Israel)
Shapiro, David; Apter, Sharon (VisIC, Israel)
A very fast-response transformer-isolated current sensing method, that is based on a sense resistor which can be of low value, e.g. the Rds(on) of a HEMT, is presented, analysed, simulated and tested experimentally. The objective of the work was to develop a solution to over-current protection of a ‘normally on’ GaN HEMT that is connected in series with a silicon MOSFET to convert the module into a ’normally off’ assembly. However, the proposed fast pulsed-current sensor is general, and as such can be applied in other applications.