New 6.5kV/1000A modules with LOCOS Trench Oxide IGBT Chips and Design Variation for Traction and HVDC Applications

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Ngwendson, Luther-King; Deviny, Ian; Zhu, Chunlin; Saddiqui, Imran; Kong, Chris; Birkett, Mark; Coulbeck, Lee; Hutchings, John; Wang, Yangang; Garraway, Tony; Thomson, Jim; Briggs, Mark; Basset, Owen (Dynex Semiconductor Ltd, UK)

In this paper, we present the design features and test results of new 6.5kV/1000A modules with LOCOS Trench Oxide (LTO) IGBT chips operating at maximum junction temperature of 150 °C. A nitride LOCOS (Local Oxidation of Silicon) process has been used to achieve IGBT trench gates with thick bottom oxide to ensure long term reliability performance. It is shown that an optmised top cell IGBT design enables optimisation for the technology to target both the low conduction loss HVDC and the low switching loss traction markets with only change in the collector and buffer design.