High Power Density Oscillation Free 1800A/3300V E2 IGBT Module with TMOS+ IGBT and PIC FRD Technology

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Ning, Xubin; Qin, Rongzhen; Luo, Haihui; Xiao, Qiang; Zhou, Feiyu; Teng, Yuan; Liu, Pengfei; Xiao, Haibo; Yao, Yao; Tan, Canjian (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, P.R. China & Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, P.R. China)
Ngwendson, Luther; Deviny, Ian (Research and Development Centre, Dynex Semiconductor Ltd., Lincoln, UK)

An oscillation free 1800A/3300V E2 IGBT module with Enhanced Trench Metal Oxide Semiconductor (TMOS+) IGBT and P-doped Island of Cathode (PIC) FRD is presented. For IGBT, The dummy P well and dummy trench structures are carefully designed to enhance the electron injection and tailor the turn on&off dI/dt and dV/dt performance, together with the optimized buffer, achieving over 10% and 30% reduction on VCE(ON) and EOFF respectively comparing with last generation planar gate IGBT. For FRD, the backside photolithography technology is developed. As a result, the oscillation during reverse recovery under high voltage and small current is successfully suppressed while the VF~EREC trade-off relationship is improved more than 30%.