Novel 550A/3300V module with IGBT4 and .XT Technology in XHPTM3 package to enhance power density and lifetime for next generation power converters

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Jadhav, Vishal; Schwarzer, Ulrich; Buchholz, Sven; Brekel, Waleri (Infineon Technologies AG, Germany)

New IGBT and Diode chip generation in 3300V voltage class with an enhanced bonding technology is depicted in this paper. Field proven Trench gate structure in combination with a robust VLD/DLC edge termination, adopted from the 6500V chip technology, forms the basis of IGBT4 chip technology. The EC4 Diode is further improved to achieve 200mV of reduced forward-voltage drop without compromising the cosmic radiation robustness. Combination of new chip technology with enlarged chip area, reduced thermal resistance and an enhanced bonding technology forms the new 550A/3300V half-bridge module to deliver an increased rms current by 30% to 40%. Applications like traction converters, special-purpose medium-voltage drives, and commercial agriculture vehicles (CAV) demands higher power cycling capability to achieve an optimized cost performance ratio for their next generation converter platforms.