Novel 550A/3300V module with IGBT4 and .XT Technology in XHPTM3 package to enhance power density and lifetime for next generation power converters

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Jadhav, Vishal; Schwarzer, Ulrich; Buchholz, Sven; Brekel, Waleri (Infineon Technologies AG, Germany)

Inhalt:
New IGBT and Diode chip generation in 3300V voltage class with an enhanced bonding technology is depicted in this paper. Field proven Trench gate structure in combination with a robust VLD/DLC edge termination, adopted from the 6500V chip technology, forms the basis of IGBT4 chip technology. The EC4 Diode is further improved to achieve 200mV of reduced forward-voltage drop without compromising the cosmic radiation robustness. Combination of new chip technology with enlarged chip area, reduced thermal resistance and an enhanced bonding technology forms the new 550A/3300V half-bridge module to deliver an increased rms current by 30% to 40%. Applications like traction converters, special-purpose medium-voltage drives, and commercial agriculture vehicles (CAV) demands higher power cycling capability to achieve an optimized cost performance ratio for their next generation converter platforms.