EMC Improvement with New Architectures of Gate Drivers for SiC MOSFET Devices
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Alves, Luciano F. S.; Lefranc, Pierre; Jeannin, Pierre-Olivier; Sarrazin, Benoit; Nguyen, Van-Sang (Universite Grenoble Alpes, CNRS, Grenoble INP, G2Elab, France)
This paper presents gate driver architectures to improve the common mode current in the full-bridge topology with a phase-shift modulation. The classical gate driver architecture associated to the full-bridge is simulated to evaluate the parasitic circulating current. A new architecture (cascaded architecture) is proposed so as to change the impedance of common mode current pathway: simulations validate the concept. Then, experimental results confirm that the cascaded architecture is better than the classical one. Furthermore, other architectures are proposed and experimental results permit to compared the five proposed architectures to the classical one.