Combining the benefits of SiC T-MOSFET and Si IGBT in a novel ANPC power module for highly compact 1500-V grid-tied inverters

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Sahan, Benjamin; Müller, Christian R.; Lenze, Andre; Czichon, Jens; Slawinski, Maximilian (Infineon Technologies AG, Germany)

Inhalt:
This paper proposes a special adaptation of the ANPC topology to optimally combine the latest 1200-V SiC T-MOSFET with IGBT technology in a cost-effective way. A new power module with a fully integrated ANPC topology is being presented enabling the implementation of highly compact and efficient 1500-V grid-tied inverters. An output power of more than 200 kW at 48 kHz could be possible with the newly developed Easy3B power module. Moreover, an almost circular P-Q diagram could be achieved which supports emerging applications such as energy storage systems.