Retrofitting Wide Band Gap Devices to Classic Power Modules using Silicon RC Snubbers
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Matlok, Stefan; Boettcher, Norman; Jahn, Markus; Hoerauf, Philipp; Eckardt, Bernd (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany)
Erlbacher, Tobias (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany & University of Erlangen-Nurnberg, Chair of Electron Devices (LEB), Germany)
Maerz, Martin (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany & University of Erlangen-Nurnberg, Chair for Power Electronics (LEE), Germany & University of Erlangen-Nurnberg, Chair of Electron Devices (LEB), Germany)
Inhalt:
Parasitic inductance causes voltage overshoot and oscillations in classic hard-switched commutation cells and power modules. Newly introduced silicon-based resistive capacitors (SiRC) can short the switching cell inside the power module itself and thereby unlink external parasitic inductance. Classic and mechanically robust power modules are now capable of switching large currents with unlimited turn-on and turn-off speed. This approach minimizes voltage spikes and parasitic oscillations without use of integrated or external attached pulse capacitors. Additionally, cutting down switching losses reduces chip area, saves energy and gains power rating of these SiRC-based power modules.