IGCTs in HVDC Systems: Analysis and Assessment of Losses

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 8Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Autoren:
Guedon, Davin (LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France & Electricite de France, Recherche et Developpement, EDF R&D, Moret-sur-Loing, France)
Ladoux, Philippe (LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France)
Kanoun, Mehdi (Electricite de France, Recherche et Developpement, EDF R&D, Moret-sur-Loing, France)
Sanchez, Sebastien (LAPLACE, Universite de Toulouse, CNRS, INPT, UPS, Toulouse, France & ICAM, Site de Toulouse, France)

Inhalt:
The efficiency of high power converters, especially for high-voltage direct current (HVDC) power transmission, embodies a crucial issue. Meanwhile, structures such as the modular multilevel converter mainly use IGBT, not initially designed for such powers. On the contrary, Integrated Gate-Commutated Thyristor (IGCT) inherits from a family of semiconductors suitable for high power transmission. Based on simulations with PLECS (electrical and thermal modelling), and data from ABB semiconductors, the study shows that power losses can be decreased thanks to IGCT over a wide range of transmitted power.