High current welding diodes: Impact of silicon wafer thickness and diffusion profile on forward voltage drop

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Vosvrdova, Adela; Pina, Libor; Radvan, Ladislav (ABB, Czech Republic)

The welding diode design is analyzed using device simulations as well as electrical measurements to carry out an optimal technology from the performance point of view; especially low forward voltage drop, reproducibility of processing and high yield are desired. A new diffusion process is demonstrated as an enabler of superior electrical performance without necessity of aggressive wafer thinning.