High reliability 6500V IGBT with low-stress copper metallization

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Liu, Guoyou; Zhang, Hongxin; Luo, Haihui; Tan, Canjian; Feng, Yu; Han, Xingyao; Ding, Jie; Tang, Zhihui; He, Honglu; Pan, Zhaohai (State Key Laboratory of Advanced Power Semiconductor Devices & Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, China)
Deviny, Ian (Research and Development Centre, Dynex Semiconductor Ltd., Lincoln, UK)

In this paper, the new copper metallization scheme for 6500V IGBT is proposed based on 8-inch IGBT technology platform, where the multilayer films consisting of barrier, seed, thick copper, and coating layer were systematically investigated (see Fig.1). Furthermore, the copper wire-bond technology was optimized. As a result, both low stress stacks and robust wire-bond interconnection were applied in 6500V IGBT modules which show good SOA performance, more than 20% higher surge current capability and fifteen times higher power cycling ability without sacrificing HTRB and HTGB performance.