High reliability 6500V IGBT with low-stress copper metallization
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Liu, Guoyou; Zhang, Hongxin; Luo, Haihui; Tan, Canjian; Feng, Yu; Han, Xingyao; Ding, Jie; Tang, Zhihui; He, Honglu; Pan, Zhaohai (State Key Laboratory of Advanced Power Semiconductor Devices & Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, China)
Deviny, Ian (Research and Development Centre, Dynex Semiconductor Ltd., Lincoln, UK)
Inhalt:
In this paper, the new copper metallization scheme for 6500V IGBT is proposed based on 8-inch IGBT technology platform, where the multilayer films consisting of barrier, seed, thick copper, and coating layer were systematically investigated (see Fig.1). Furthermore, the copper wire-bond technology was optimized. As a result, both low stress stacks and robust wire-bond interconnection were applied in 6500V IGBT modules which show good SOA performance, more than 20% higher surge current capability and fifteen times higher power cycling ability without sacrificing HTRB and HTGB performance.