Low Loss 820A/750V S3+ IGBT Module with New IGBT and Diode technology for EV/HEV Application

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Yao, Yao; Luo, Haihui; Xiao, Qiang; Zhang, Zhonghua; Tan, Zhenhua; Xiao, Haibo; Qin, Rongzhen; Ning, Xubin; Xu, Ninghua; Tan, Canjian (State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, P.R. China & Zhuzhou CRRC Times Electric Co.,Ltd., Zhuzhou, P.R. China)
Zhu, Chunlin (Research and Development Centre, Dynex Semiconductor Ltd., Lincoln, UK)

820A/750V S3+ IGBT module implementing new IGBT and diode is presented. The Recessed-Emitter-Trench (RET) and Recessed-Dummy-Trench (RDT) fine pattern technology are used in the proposed IGBT, which shrink the mesa width to sub-micron without much reliance on special processes, and subsequently strongly improved VCE(ON) – EOFF relationship. For the diode, the Carrier-Profile-Control (CPC) technology and thin wafer technology are performed to obtain improved VF – EREC relationship and significantly reduced oscillation. As a result, the total loss of 820A/750V S3+ module is decreased by 29.6% when compared to the last generation product. Furthermore, the robust SOA performance and 175 ºC Tjmax are realized.