MDmesh™ DM6: The latest Super-junction MOSFET technology with improved fast recovery diode

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 7Sprache: EnglischTyp: PDF

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Parisi, Carmelo; Melito, Maurizio; Fusillo, Filadelfo; Nardo, Domenico (STMicroelectronics, Italy)

ST’s new MDmesh(TM) DM6 series from the STPOWER(TM) family is based on the latest high-voltage super-junction MOSFET technology with an integrated fast recovery body diode, and is principally targeted at the high-power SMPS market for server and telecom applications, as well as the HEV market for OBC (on-board chargers) and charging stations. This paper analyses certain features of the MDmesh(TM) DM6 series that render it suitable for both soft and hard switching applications, thanks to their very low reverse recovery charge (Qrr) that improves performance in resonant switching topologies, where hard switching on a conducting body diode can occur. We also compare this new super-junction MOSFET series with our previous MDmesh(TM) DM2 series and competitor devices.