New 1200 V SiC MOSFET Intelligent Power Module

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Baek, Miran; Lee, Minsub; Han, Soohyuk; Lee, Junbae; Chung, Daewoong (Infineon Technologies Korea, Korea)

This paper presents the new and smallest 1200 V silicon carbide (SiC) intelligent power module (IPM) for variable-speed drive applications such as active harmonic filters for HVAC (heating, ventilation and air conditioning) and high-performance motor drives. This IPM has integrated six SiC MOSFETs and optimized a single 6-channel silicon-on-insulator (SOI) gate driver in a transfer-molded type dual-in-line package (DIP) with a direct-bond-copper (DBC) substrate. This paper provides an overall description of electrical characteristics, package and thermal performance.