Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Ruthardt, Johannes; Marx, Philipp; Nitzsche, Maximilian; Fischer, Manuel; Roth-Stielow, Joerg (University of Stuttgart, Institute for Power Electronics and Electrical Drives, Germany)
Baron, Kevin Munoz; Sharma, Kanuj (University of Stuttgart, Institute of Robust Power Semiconductor Systems, Germany)
In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit’s impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.