GaN micro-heater chip for power cycling of die attach modules with Ag sinter joint and high temperature solder

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 6Sprache: EnglischTyp: PDF

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Kim, Dongjin; Nagao, Shijo; Chen, Chuantong; Kimoto, Yukiharu; Sugahara, Tohru; Suganuma, Katsuaki (The Institute of Scientific and Industrial Research, Osaka University, Japan)
Yamamoto, Yasuyuki (Tokuyama Scientific Co., Japan)
Wakasugi, Naoki (Yamato Science Co., Ltd., Japan)
Takemasa, Tetsu (Senju Metal Industry Co., Ltd., Japan)

This study was carried out to evaluate the power cycling characteristics of Ag sinter paste and high temperature solder materials for WBG power modules by a GaN micro-heater chip with a finite element method (FEM) simulation. The GaN micro-heater chip including an all power cycling test machine was designed, and the hybrid Ag sinter paste and high temperature solder materials were applied as a die-attach material between the GaN TEG chip and the DBC substrate. Then, the GaN micro-heater chips were attached on to the DBC substrate. The junction temperature (Tj max) of 250 ºC and a water cooling system was applied during power cycling test. Consequently, the thermal characterization of GaN die-attached on the DBC substrate with various die-attach materials were numerically evaluated and the results indicated that the Ag sinter joint structure exhibits a better thermal transfer behavior than Sn-Ag-Cu based solder joint.