A multi-dimensional full automatic power semiconductor test bench for accurate semiconductor loss calculation

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 8Sprache: EnglischTyp: PDF

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Stamer, Fabian; Schwendemann, Ruediger; Hiller, Marc (Karlsruhe Institute of Technology (KIT), Germany)

This paper presents a multi-dimensional full automatic semiconductor test bench for accurate semiconductor loss determination. The test bench is based on the double pulse test [1] and allows the measurement of conduction losses and switching energies for any current, voltage and temperature combination of the device under test. A conduction- and switching loss analysis is presented for silicon carbide (SiC)- and silicon (Si)-based semiconductor devices. Distinct differences of datasheet information and measurement results demonstrate the significant benefits of the designed test bench for an accurate semiconductor loss calculation. Afterwards the semiconductor loss calculation results based on the data sheet data and the measured losses are compared.