Suppressing voltage glitches in SiC MOSFETs

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 7Sprache: EnglischTyp: PDF

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Liberti, Anselmo Gianluca; Catalisano, Giuseppe (STMicroelectronics, Italy)
Bonelli, Giuseppe (STMicroelectronics, Germany)

Fast switching devices such as Silicon-Carbide (SiC) MOSFETs are affected by a common problem related to the induced Miller turn-on effect and the generation of glitch phenomena on the Gate-Source voltage. To better understand this phenomena, this paper looks at both the negative and positive voltage glitches that occur on the Gate-Source terminals of SiC MOSFETs during the turn on and off transients on a typical half-bridge DC-AC power converter topology. A suitable Gate driver with a Miller clamp function has been used to mitigate false turn-on behavior under fast switching conditions.