A Fast and Accurate SiC MOSFET Compact Model for Virtual Prototyping of Power Electronic Circuits

Inhalt:
Power semiconductor compact models assist engineers throughout the development process of power electronic circuits by predicting and verifying the behavior of fast switching SiC MOSFETs in a virtual prototyping environment. This paper discusses a SPICE-based simulation model for the 1200-V, 45-mOmega CoolSiCTM SiC MOSFET that is both accurate and, owing to its compact structure, fast and robust in convergence. This enables, besides traditional double-pulse, also multi-pulse simulations of entire power circuits at the system level. A thorough comparison between simulation and measurement data shows a very good agreement over a wide range of parameter variations in both static and dynamic behavior.