3.3 kV, 1200A Si-SiC hybrid technology using 1.7 kV SiC diodes

Inhalt:
In Si IGBT modules, anti-parallel Si diodes are considered as a weak link which limits the switch (IGBT) from operating at its full potential. This is caused by the reverse recovery behaviour of the Si diodes, and the problem is more pronounce for high power modules. On the other hand, SiC Schottky diodes have low reverse recovery and present an alternative to circumvent this problem. In this paper 3.3 kV, 1200 A Si-SiC hybrid modules are built using 3.3 kV Si IGBT and 1.7 kV, 50 A SiC diodes. Various electrical tests are performed on these modules to benchmark their performance against Si modules having similar ratings. This is the first generation hybrid module, in future the work will be undertaken to optimize the design to reduce the stray parameters of the module.