Switching Characteristics of a 1.2 kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Wiesemann, Julius; Sommer, Christian; Mertens, Axel (Institute for Drive Systems and Power Electronics, Leibniz Universität Hannover, Germany)

This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.