Properties of a GaAs Power Rectifier Diode Module for Ultra-Fast Electric Vehicle Battery Charging Systems

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 7Sprache: EnglischTyp: PDF

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Blank, Thomas; An, Bao; Wurst, Helge; Luh, Matthias; Leyrer, Benjamin; Weber, Marc (Karlsruhe Institute of Technology, Germany)
Dudek, Volker (3-5 Power Electronics GmbH, Germany)
Ishikawa, Dai (Hitachi Chemical Co., Japan)

New GaAs power diodes with an electron mobility of 8000 cm2/V•s, a breakdown voltage 750 V, rated at a forward current of 20 A are evaluated in a rectifier module for ultrafast battery charging. Thermal simulations reveal a thermal module resistivity of 0.73 K/W. The high resistivity is caused by the thickness of the die (570 µm) and the low thermal conductivity of GaAs (33 W/m•K at 100 °C). Hence, the DCB was sintered in a large-area, low-temperature, copper-sinter process to the baseplate to reduce the thermal resistivity. A thinned, 70 µm thick diode yields a resistivity of 0.33 K/W.