New GaN Technology for Superior Efficiency in Electric Vehicles

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 3Sprache: EnglischTyp: PDF

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Scrimizzi, Filippo; Fusillo, Filadelfo; Gambino, Giusy (STMicroelectronics, Italy)

ST’s new gallium-nitride (GaN) transistor prototypes can be used in a large range of automotive applications to provide the necessary performance improvements demanded by the ever increasing car electrification requirements. Our low voltage GaN high-electron-mobility transistors (HEMTs) are highly suitable for mild hybrid powertrain systems as they render new power conversion concepts possible with faster switching operations and improved reliability.