Level-Shifter Current Influence to Power Loss of Gate Driver IC

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 4Sprache: EnglischTyp: PDF

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Song, Jinsheng (Infineon Technologies Americas Corp., USA)

The level-shifter-based gate driver IC is one of the most popular types of high-voltage gate-driver ICs. Level-shifter current plays an important role regarding the power loss of this type of gate driver IC. Lower level-shifter current is a key enabler for high switching frequency, which can offer certain benefits for the applications and systems in the power electronic field. To achieve this, new driver IC technologies such as SOI technology is recommended. This paper presents the advantages of Infineon SOI gate-driver technology, and its benefits in reducing power loss by lowering level-shifter current.