Optimal Algorithm Design based on a Digitalized Active Voltage Gate Driver for IGBT Turn-on Transition
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Li, Chen; Wang, Zhiqiang (School of Electrical Engineering, Dalian University of Technology, China)
Tan, Kun; Ji, Bing (Department of Engineering, University of Leicester, UK)
This paper proposed a Digitalized Active Voltage Gate Driver (DAVGD) for Insulated Gate Bipolar Transistors (IGBTs). An optimal control algorithm is designed for the DAVGD to achieve the better turn-on performance. The DAVGD consists of a Controllable Voltage Source (CVS), a digital processor and sensing units. By implementing the CVS, the piecewise active control can be realized which enables various voltage levels to be applied for each turn-on transient steps. Hence, the IGBT turn-on characteristics such as current overshoot and switching loss can be adjusted. In this paper, the capability of the CVS to adjusting the turn-on characteristics is investigated. Furthermore, an optimal control algorithm is designed and applied in the proposed DAVGD to reduce both current overshoot and switching loss. Finally, the performance and the control algorithm were experimentally verified under different load conditions. The algorithm can find the optimal driving profile for the certain operational conditions through the limited switching cycles. In addition, the algorithm is able to avoid the incomplete conduction of IGBT by ensuring a proper intermediate voltage selected above the Miller plateau.