Comprehensive Comparison of a SiC MOSFET and Si IGBT Based Inverter
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Nitzsche, Maximilian; Fischer, Manuel; Ruthardt, Johannes; Roth-Stielow, Joerg (University of Stuttgart, Institute for Power Electronics and Electrical Drives (ILEA), Germany)
Cheshire, Christoph (Hochschule Esslingen, University of Applied Sciences, Germany)
Inhalt:
The investment which is necessary to replace Si IGBTs with SiC MOSFETs in medium to high power DC-AC inverters needs to be balanced carefully against the advantages SiC offers. This paper compares a 20 kW Si IGBT inverter with a 20 kW SiC MOSFET inverter. The power semiconductor components are operated identically in a modular half bridge module to ensure comparability. Thereby the measurement of the switching losses is explicitly not the focus but the overall efficiency while taking volume, current ripple, switching frequency and inductance into account. The limits of reasonable operating range shall be evaluated and an overview on the benefits of SiC on system level will be given.