A Comparative Study of SPICE models for an SiC-MOSFET

Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland

Tagungsband: PCIM Europe 2019

Seiten: 5Sprache: EnglischTyp: PDF

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Mukunoki, Yasushige; Horiguchi, Takeshi; Nakatake, Hiroshi (Advanced Technology R&D Center, Mitsubishi Electric Corporation, Japan)
Terashima, Tomohide; Tarutani, Masayoshi (Power Device Works, Mitsubishi Electric Corporation, Japan)

This paper describes a comparative study of two SPICE models for a discrete Silicon-Carbide (SiC) MOSFET. One is a manufacture’s model, and the other is our newly-developed model. The SPICE components of the two models are compared in detail. The accuracy of the two models is discussed by comparison in the simulated switching waveforms with measurement.