A 1200V/400 A Hybrid Module with Si-IGBT and SiC-MOSFET Development
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Cao, Han; Ning, Puqi; Yuan, Tianshu; Wen, Xuhui (University of Chinese Academy of Sciences, Institute of Electrical Engineering, China)
Inhalt:
Compared with Si-IGBT, there is no conductance modulation effect in SiC-MOSFET which makes it a higher conduction loss. However, SiC-MOSFET can be operated in higher frequency on account of its low switching loss. Based on this method, Hybrid Switch (HyS) combines both advantages of Si-IGBT and SiC-MOSFET, and the cost is closer to Si IGBT. In this paper, a 1200V/400A HYS with Si-IGBT and SiC-MOSFET is fabricated and tested under Double-Pulse Test (DPT). Also, a gate driver circuit with Miller Clamp is designed and applied for 1200V/400A HyS.