A practical example of hard paralleling SiC MOSFET modules

Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China

Tagungsband: PCIM Asia 2019

Seiten: 7Sprache: EnglischTyp: PDF

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Autoren:
Zheng, Ziqing; Zhang, Minda (Infineon, China)
Lenze, Andre; Mainka, Krzysztof (Infineon, Germany)
Levett, David (Infineon, USA)

Inhalt:
Is it possible to design a matched gate driver and power PCB to hard parallel four 6 mOmega 1200 V SiC MOSFET modules? This was the question that this paper sets out to answer. The practical results of this design project are described including: the gate driver schematics, PCB layout with the key tracking design issues, and waveforms of both static and dynamic current sharing performance. Finally, a Monte Carlo statistical analysis to demonstrate the effects on current sharing due to production spreads in device parameters such as on resistance.