An Integrated Gate Driver Solution for Silicon Carbide Semiconductor Applications
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Wang, Hao (Power Integrations, China)
Fink, Karsten (Power Integrations GmbH, Germany)
Inhalt:
A gate driver solution for Silicon Carbide (SiC) semiconductors based on SIC1182K gate driver IC, a new member of SCALE-iDriverTM family by Power Integrations, is presented in this paper. Due to Advanced Active Clamping and Short-Circuit Detection that are achieved using only one input pin, the proposed SIC1182K solution not only allows full SiC power modules to be safely turned off without experiencing excessive Drain-Source voltages but, also ensures that the semiconductor can be turned off in case of a short-circuit event within the typical shortcircuit time. A application circuit of SIC1182K is presented and has been verified based on two full SiC power modules from different manufactures.