Analysis the Reverse Conduction Characteristic and Influence of Anti-parallel SiC SBD of eGaN HEMT
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Qin, Haihong; Peng, Zihe; Zhang, Ying; Wang, Wenlu (Nanjing University of Aeronautics and Astronautics, China)
Xun, Qian (Chalmers University of Technology, Sweden)
Inhalt:
eGaN HEMT has been developed with up to 650V blocking capability with lower conduction losses and higher switching speed compared MOSFET. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous rectification topologies. This paper introduces the reverse conduction mechanism and characteristics of eGaN HEMT, and establishes a double pulse test platform to explore the influence of anti-parallel SiC SBD for eGaN HEMT on the reverse conduction characteristic and switching characteristic of eGaN HEMT, which will provide some help for the application of the eGaN HEMT’s self-commutated reverse conduction.