Crosstalk Mechanism and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 7Sprache: EnglischTyp: PDF
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Autoren:
Peng, Zihe; Qin, Haihong; Gong, Jiayan; Zhang, Ying (Nanjing University of Aeronautics and Astronautics, China)
Xun, Qian (Chalmers University of Technology, Sweden)
Inhalt:
It has been demonstrated that Enhancement-mode GaN HEMT(eGaN HEMT) has lower conduction losses and higher switching speed. However, higher switching speed will cause higher dVDS/dt leading to worse crosstalk problems. This paper analyzes the mechanism of crosstalk for eGaN HEMT first. Then, the mathematical model of crosstalk voltage and its influence factors are given. A double pulse test model is established and three kinds of crosstalk suppression methods without auxiliary circuit are simulated and compared. The simulation results may give a guideline for choosing which method in specific situation.