Reliability evaluation of IGCT based on demanding long-term application
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Tsyplakov, Evgeny; Chen, Makan; Stiasny, Thomas; Winter, Christian; Quittard, Olivier; Weber, Florian; Berner, Joerg (ABB Switzerland Ltd., Semiconductors, Switzerland)
Inhalt:
In the last 20 years IGCT (Integrated Gate Commutated Thyristor) have been designed-in into high power applications like motor drives, rail-interties, STATCOM, breakers and other de-manding applications requiring highest reliability. Over 250,000 IGCTs are in heavy duty field operation with excellent reliability. This paper evaluates test results from accelerated testing, quality monitoring results over many years, and field reliability data with well-known load condition. Furthermore, field failures are analyzed to establish failure pattern. Finally, analysis of returned devices after 15 years operation under defined load condition are shown.