A High-Power Miniaturized Wireless EV Charger with a New SiC-VMOSFET driven Single-Ended Inverter
Konferenz: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
26.06.2019 - 28.06.2019 in Shanghai, China
Tagungsband: PCIM Asia 2019
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Tono, Yuki; Omori, Hideki; Iwanaga, Taichi (Osaka Institute of Technology, Osaka, Japan)
Michikoshi, Hisato; Sakamoto, Kunihiro (National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan)
Inhalt:
In this paper, a high- power and high-frequency single-ended wireless EV charger with a newly developed SiC-VMOSFET is described. Power losses of SiC-MOSFET and Si-IGBT under the international standard high-frequency operation are discussed and it is described that SiC-MOSFET is suitable for the high frequency wireless EV charging system. Then, development of a 3kW high-power single-ended wireless EV charger is discussed. Since a high voltage devise of 1700V is necessary for the high-power wireless charger, very high conduction loss of the high voltage MOSFET makes the implementation of the inverter difficult in actual application. Indicated is a newly developed high voltage SiC-VMOSFET (V-groove trench) with very low on resistance to be the solution of the problem. In addition, FWD (Fly Wheel Diode) constructions are comparatively studied and a Body diode type of FWD is indicated to be best in a practical point of view.