Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation
Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland
Tagungsband: PCIM Europe digital days 2020
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Furukawa, Masaru; Kono, Hiroshi; Sano, Kenya; Yamaguchi, Masakazu; Suzuki, Hisashi; Misao, Tadashi (Toshiba Electronic Devices & Storage Corporation, Japan)
Tchouangue, Georges (Toshiba Electronics Europe GmbH, Germany)
Inhalt:
One of the issues of SiC MOSFET is the reliability of its intrinsic body diode when used as a free-wheeling diode (FWD). The reverse current through the SiC MOSFET may cause Ron degradation over time. A new structure of a SBD-embedded MOSFET has been proposed that prevents the current conduction through its intrinsic body diode. A low RonA 1.2kV class SBD-embedded SiC MOSFET has been realized that improves its reliability by optimizing the SBD structure.