Impact of the Dynamic On-State Resistance Increase in a Phase-Shifted GaN Low Voltage Converter

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Kahl, Tino; Kuring, Carsten; Dieckerhoff, Sibylle (Chair of Power Electronic, Technische Universität Berlin, Germany)
Fromme, Christopher; Tannhaeuser, Marvin (Siemens AG, Smart Infrastructure, Low Voltage Products, Germany)

Inhalt:
In a phase-shifted converter applying low voltage normally-off GaN transistors, the dynamic on-state resistance shows a marginally increasing value at low currents but increases unexpectedly at higher currents. Since the converter is designed for a high current application, the observed Ron-degradation has a particular negative effect on the achievable output power and efficiency. This paper investigates the influence of the increased on-state resistance in continuous half-bridge operation and in the phase-shifted full-bridge converter. In order to show the ongoing improvements in GaN device technology, double-pulse and continuous investigations are conducted with transistors from different production lots.