Driving GaN HEMT High-Voltage Half-Bridge with a Single-Channel Non-Isolated Gate Driver with Truly Differential Inputs

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 8Sprache: EnglischTyp: PDF

Autoren:
Varajao, Diogo (Infineon Technologies AG, Germany)
Ferianz, Thomas; Chi Zhang, Vincent; Menditti Matrisciano, Carmen (Infineon Technologies Austria AG, Austria)

Inhalt:
This paper describes the functional principle of a non-isolated gate driver with truly differential inputs (TDI) and the benefits of its application in GaN HEMT high-voltage resonant half-bridge DC-DC converters (LLC). This innovative gate driver is able to overcome the driving issues associated with DC ground-shift or AC noise between controller and driver IC ground potentials, enabling its application even in high-side driving as a replacement of isolated gate drivers. Test results obtained in a GaN HEMT based 600 W / 400 V / 300 kHz half-bridge resonant converter are provided.