Development of an Accurate SPICE Model for a new 1.2-kV SiC-MOSFET device

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 4Sprache: EnglischTyp: PDF

Autoren:
Masuhara, Takashi; Horiguchi, Takeshi; Mukunoki, Yasushige (Advanced Technology R&D Center, Mitsubishi Electric Corporation, Japan)
Terashima, Tomohide; Hanano, Naochika; Suekawa, Eisuke (Power Device Works, Mitsubishi Electric Corporation, Japan)

Inhalt:
This paper describes a SPICE model for a new discrete 1.2-kV SiC-MOSFET. The developed SPICE model features nonlinear stray capacitances and accurate output characteristics in a saturation region. This model shows excellent reproducibility of the turn-on and turn-off switching waveforms for both gate drive circuit and main power circuit simultaneously, which indicates a high potential of the model as a future design tool.