300 A Solid State Circuit Breaker using Parallel Connected GaN Bidirectional Switch

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 6Sprache: EnglischTyp: PDF

Autoren:
Suzuki, Asamira; Ichiryu, Takashi; Kinoshita, Yusuke; Ishida, Hidetoshi; Handa, Hiroyuki; Hatsuda, Tsuguyasu (Industrial Solutions Company, Panasonic Corporation, Japan)

Inhalt:
A solid state circuit breaker (SSCB) using parallel connected GaN bidirectional switch with low on-state resistance (Ron) is demonstrated for the first time. The influence of parallel connection on current interruption is investigated by circuit simulation. It is turned out that the parallel connection does not affect adversely the current interruption in the case of 3-parallel connection. In addition, it is demonstrated that threshold voltage (VTH) rather than gate inductance is important factor of the device for suppression of current deviation. We fabricate 3-parallel connected GaN bidirectional switch with the same VTH. The Ron of 9.3 mOmega and the maximum current of 390 A are attained in this device. The fabricated SSCB interrupts the current of 306 A within 1.2 mus successfully by appropriate gate driving.